发明名称 |
SPLIT-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE |
摘要 |
A transistor structure having an gallium arsenide (GaAs) semiconductor substrate; a lattice match layer; an indium aluminum arsenide (InAlAs) barrier layer disposed over the lattice match layer; an InyGa1-yAs lower channel layer disposed on the barrier layer, where y is the mole fraction of In content in the lower channel layer; an InxGa1-xAs upper channel layer disposed on the lower channel layer, where x is the mole fraction of In content in the upper channel layer and where x is different from y; and an InAlAs Schottky layer on the InxGa1-xAs upper channel layer. The lower channel layer has a bandgap greater that the bandgap of the upper channel layer. The lower channel layer has a bulk electron mobility lower than the bulk electron mobility of the upper channel layer where.
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申请公布号 |
US2004262632(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20030606820 |
申请日期 |
2003.06.26 |
申请人 |
MARSH PHILBERT F.;WHELAN COLIN S.;HOKE WILLIAM E. |
发明人 |
MARSH PHILBERT F.;WHELAN COLIN S.;HOKE WILLIAM E. |
分类号 |
H01L29/778;(IPC1-7):H01L31/032;H01L31/072 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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