| 摘要 |
The invention includes a method of forming a crystalline phase material which includes providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase and annealing the crystalline material of the first crystalline phase to transform it to a second crystalline phase. The stress inducing material induces compressive stress within the first crystalline phase during the anneal to produce a more dense second crystalline phase. Example compressive stress inducing layers include SiO2 and Si3N4, while example stress inducing materials for providing into layers are Ge, W and Co. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSix. The invention additionally includes incorporating the crystalline phase material into a conductive line.
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