发明名称 |
SELECTIVE SILICON-ON-INSULATOR ISOLATION STRUCTURE AND METHOD |
摘要 |
A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.
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申请公布号 |
US2004262695(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20030604102 |
申请日期 |
2003.06.26 |
申请人 |
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发明人 |
STEEGAN AN L.;SURENDRA MAHESWARAN;WANN HSING-JEN;ZHANG YING;ZACH FRANZ;WONG ROBERT |
分类号 |
H01L21/336;H01L21/76;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/84;H01L27/12;H01L29/76;H01L31/062;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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