发明名称 |
Method for forming metal interconnect of semiconductor device |
摘要 |
A method for forming a metal interconnect of a semiconductor device defined by a fine trench or via is disclosed. The method includes forming a first interconnect insulating layer on a substrate. A via hole is formed on a predetermined portion of the first interconnect insulating layer. A second interconnect insulating layer is formed on the first interconnect insulating layer. The second interconnect insulating layer is planarized. A hard mask layer is formed on the second interconnect insulating layer. The hard mask layer is patterned to remove selective portions. A trench is formed by etching the second interconnect insulating layer. A metal interconnect is formed in the trench.
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申请公布号 |
US2004266178(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20040778388 |
申请日期 |
2004.02.17 |
申请人 |
ANAM SEMICONDUCTOR INC. |
发明人 |
KIM KI YOUNG |
分类号 |
H01L21/3205;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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