发明名称 Internal voltage generator for semiconductor device
摘要 Disclosed is an internal voltage generator which generates a stable internal voltage using two power up sensing means. Clamp means outputs a first voltage. First and second power up sensing means sense the external applied to the semiconductor device and output first and second control signals, respectively. A first switch receives the first voltage and a switch controller receives the first and second control signals from the first and second power up sensing means and controls turn on/off of the first switch. A second switch is turned on/off according to the second control signal from the second power up sensing means and receives a second voltage. An amplifier selectively receives the first and second voltages from the first and second switches and outputs the second voltage.
申请公布号 US2004263142(A1) 申请公布日期 2004.12.30
申请号 US20030671382 申请日期 2003.09.25
申请人 KANG CHANG SEOK;CHOI JUN GI 发明人 KANG CHANG SEOK;CHOI JUN GI
分类号 G05F1/46;(IPC1-7):G05F3/04 主分类号 G05F1/46
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