| 摘要 |
A test structure and method for testing a semiconductor device are provided. The test structure including a first test pattern having a plurality of electrically separated metal patterns, a plurality of metal vias formed in opposite end portions of the respective metal patterns, and a second test pattern connected to the first test pattern through the metal vias. By using this structure, the presence, nature, and size of a metal failure can be detected by analyzing a resistance arising from the application of a test voltage to the first test pattern.
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