发明名称 Semiconductor memory device
摘要 A data bus of a single-end structure is arranged commonly to a plurality of banks, and a reference data bus transferring reference data providing a criterion of logical level determination of transfer data is arranged corresponding to each bank. For generating a reference potential, a Vref generating circuit is arranged neighboring and corresponding to a DQ circuit band performing input/output of data such that the reference potential required in a data write operation and a data read operation is transmitted to each reference data bus in a concentrated fashion. A semiconductor memory device thus formed transfers data fast with low current consumption without increasing an interconnection layout area.
申请公布号 US2004264260(A1) 申请公布日期 2004.12.30
申请号 US20040878227 申请日期 2004.06.29
申请人 RENESAS TECHNOLOGY CORP 发明人 KONO TAKASHI
分类号 G11C11/409;G11C5/06;G11C5/14;G11C11/401;G11C11/407;(IPC1-7):G11C5/00 主分类号 G11C11/409
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