| 摘要 |
A pattern exposing method forms a predetermined resist pattern (41, 42, 42A) on a substrate (5) by exposing a first resist layer (39) which is formed on the substrate (5) using a first reticle (6) which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer (39), exposing a second resist layer (40) which is formed on the entire surface of the substrate (5), including a top of the first resist layer (39), using a second reticle (6, 14) which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer (40) so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern (41, 42, 42A) is formed. <IMAGE> |
