发明名称 |
Dynamic RAM test device selects address of address pointer and pattern generator while generating back pattern after count of defective number of bits, for output to failed memory |
摘要 |
<p>A pattern generator (20) generates an address while producing a test pattern for an examined memory (10), after receiving a failure memory count completion signal. A multiplexer (4) selects an address from an address pointer (3) and the pattern generator while generating back pattern in pattern generator after the count of defective number of bits respectively, for output to a failed memory (5). An independent claim is also included for dynamic RAM test method.</p> |
申请公布号 |
DE102004026521(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
DE20041026521 |
申请日期 |
2004.05.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, KI-SANG;AKIYAMA, TSUTOMU;PARK, JE-YOUNG |
分类号 |
G01R31/3183;G01R31/28;G11C29/00;G11C29/56;H01L21/66;(IPC1-7):G11C29/00 |
主分类号 |
G01R31/3183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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