发明名称 |
Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film |
摘要 |
The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
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申请公布号 |
US2004262613(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20040873285 |
申请日期 |
2004.06.23 |
申请人 |
MAEKAWA SHINJI;KAKEHATA TETSUYA;TAKEHARA YUUICHI |
发明人 |
MAEKAWA SHINJI;KAKEHATA TETSUYA;TAKEHARA YUUICHI |
分类号 |
C23C16/34;H01L21/318;H01L27/32;H01L51/00;H01L51/52;(IPC1-7):H01L29/04 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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