发明名称 Plasma processing apparatus
摘要 An apparatus is provided. The apparatus comprises a chamber for loading a substrate therein, a plasma creation area in the chamber, first and second electrodes installed in the chamber, and a power source for supplying a radio frequency to the first electrode. The first electrode includes a plurality of areas having different resistances for varying the radio frequency applied to the plasma creation area. The upper electrode makes a plasma density uniform to enhance a process uniformity.
申请公布号 US2004261714(A1) 申请公布日期 2004.12.30
申请号 US20040868255 申请日期 2004.06.14
申请人 CHOI MIN-WOONG 发明人 CHOI MIN-WOONG
分类号 H01L21/3065;C23C16/00;H01J37/32;H01L21/311;H01L21/3213;(IPC1-7):C23C16/00 主分类号 H01L21/3065
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