发明名称 |
Elektronische Verdrahtungsstruktur |
摘要 |
A multilevel electronic interconnect structure (50) comprises at least two layers of aluminum conductors (54,56) on and separated by a non-aluminum oxide dielectric material (58); a layer (60) of an adhesion metal on said dielectric material, beneath each conductor; a layer of a barrier metal (62) selected from the group consisting of tantalum, niobium, hafnium, titanium, and zirconium between said adhesion metal layer and each conductor; filled aluminum vias (66) interconnecting said layers of aluminum conductors, said filled aluminum vias being surrounded by said non-aluminum oxide dielectric material; and a layer (68) of said barrier metal beneath each via (66), between said via and an interconnected conductor. <IMAGE> |
申请公布号 |
DE69827851(D1) |
申请公布日期 |
2004.12.30 |
申请号 |
DE1998627851 |
申请日期 |
1998.03.25 |
申请人 |
AMITEC-ADVANCED MULTILAYER INTERCONNECT TECHNOLOGIES LTD., MIGDAL HAEMEK |
发明人 |
HURWITZ, DROR;IGNER, EVA;YOFIS, BORIS;KATZ, DROR |
分类号 |
H01L21/48;H01L23/498;H01L23/532;H01L23/538;H05K3/02;H05K3/38;H05K3/46 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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