发明名称 |
METHODS OF PLANARIZATION |
摘要 |
A method of planarization allows for the use of chemical mechanical polishing (CMP) in starting structures having films not generally suitable for CMP processes. Two material layers are formed over a starting structure, and the upper layer is planarized in a CMP process. A nonselective etch is then used to transfer the planar topography to the lower level.
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申请公布号 |
US2004266195(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20030604196 |
申请日期 |
2003.06.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOKUMACI OMER;DORIS BRUCE;HORAK DAVID;JAMIN FEN F. |
分类号 |
H01L21/3105;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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