发明名称 METHODS OF PLANARIZATION
摘要 A method of planarization allows for the use of chemical mechanical polishing (CMP) in starting structures having films not generally suitable for CMP processes. Two material layers are formed over a starting structure, and the upper layer is planarized in a CMP process. A nonselective etch is then used to transfer the planar topography to the lower level.
申请公布号 US2004266195(A1) 申请公布日期 2004.12.30
申请号 US20030604196 申请日期 2003.06.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DOKUMACI OMER;DORIS BRUCE;HORAK DAVID;JAMIN FEN F.
分类号 H01L21/3105;(IPC1-7):H01L21/311 主分类号 H01L21/3105
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