Methods for forming a gap filling layer using high density plasma

摘要

Methods of forming a gap filling layer using high density plasma are disclosed. A disclosed method comprises directing at least one gas for ILD deposition and at least one gas for etching into a chamber containing a substrate having at least one predetermined structure; depositing a first ILD over the substrate until a thickness of the first ILD reaches a predetermined thickness; suspending supply of the gas for ILD deposition into the chamber; removing at least one part of the first ILD; re-starting the supply of the gas for ILD deposition into the chamber; and depositing a second ILD on the first ILD