| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device. After an undoped amorphous silicon layer is formed, it is crystallized by means of a spike rapid thermal process so that the grain growth of a small size is facilitated. Therefore, while the grain size is formed uniformly and small, a grain cross-section of the small size, as a columnar structure, induces crystals grown in a direction perpendicular to the interface. It is therefore possible to reduce the surface roughness and accomplish an electrically uniform characteristic over the entire area.
|
