Electronic device, magnetoresistance effect element; magnetic head, recording/reproducing apparatus, memory element and manufacturing method for electronic device

摘要

An electronic device free from variation of conductivity is provided. The electronic device 100 includes electrodes 2 and 3; and a metal conductor thin film 7 electrically connected to the electrodes 2 and 3. The metal conductor thin film 7 includes a metal conductor portion 1 that bridges a gap between the electrodes 2 and 3. The bridge length L of the metal conductor portion 1 is not more than a mean free path Lambda of electron in the metal conductor portion 1 at the operation temperature of the electronic device 1. The electronic device 100 is formed by forming the electrodes 2 and 3 on the substrate 8 with a gap having the bridge length L; forming a support 4 that includes at least one selected from the group consisting of a nano-tube and a nano-wire and bridges a gap between the electrodes 2 and 3; and forming the metal conductor portion 1 by depositing the metal conductor thin film 7 on the support 4, and the electrodes 2 and 3.