| 摘要 |
<p>A patterning method comprises (A) forming a resist material layer on a substrate, patterning the resist layer, and exposing one part of the substrate, (B) modifying the surface of the resist layer, (C) forming a thick paste material layer, removing the resist material layer, and (D) removing the thick paste material layer on the resist layer, leaving the thick past layer on the substrate which is not covered by the resist layer. Independent claims are also included for: (1) a similar method comprising (A), (B), (C1) forming a photosensitive paste layer, (D1) exposing the paste layer to light, developing images and selectively leaving the thick paste layer, and (E) removing the resist layer; (2) preparation of cold cathode field electron emission element by forming the cathode, forming insulating layer, forming openings for gate electrodes and insulating layer, exposing cathode at the bottom of the opening, and then pattering using the above methods; (3) preparation of cold cathode field electron emission apparatus wherein a resist layer is formed on the side of the openings, and covering the gate electrode, and insulating layer; (4) a similar preparation to (2) wherein a gate electrode is formed at a direction different form that of the cathode; (5) a similar preparation of (4) wherein a light non-permeable material having holes exposing light permeable support is formed on the support; (6) a similar preparation which is a combination of (4) and (5); (7) a similar preparation to (3) wherein a gate cathode is formed at the direction different from the cathode on an insulating layer; (8) preparation of the field electron emission element by forming a cathode along a first direction on the support, forming a resist layer by patterning the resist layer to expose one part of the cathode; (9) preparation of a similar apparatus as above incorporating (8); (10) a similar preparation to (9) wherein the insulating layer is formed after the resist layer, and a gate electrode is formed at a direction different from that of the cathode on the insulating layer, electrons are released from the bottom of the openings of the gate electrode and the insulating layer; (11) preparation of a similar element wherein the thick paste layer is exposed to light using a mask through the holes of the light non-permeable layer, and electron releasing parts are formed by developing the paste layer; (12) preparation of the apparatus incorporating (11); (13) preparation of the element which contains a step of forming a resistant material or light permeable material in the holes of the light non-permeable material; (14) preparation of the apparatus incorporating (13); and (15) preparation of the apparatus incorporating (13) and the insulating layer is formed after removal of the resist layer.</p> |
