MEASURING METHOD OF INCIDENT LIGHT AND SENSOR HAVING SPECTROSCOPIC MECHANISM EMPLOYING IT

摘要

A method for measuring incident light employing a simple semiconductor structure provided with a single electron capturing section handling incident light, and a sensor having a spectroscopic mechanism employing it. A spectroscopic sensor comprises a semiconductor substrate (1), a first diffusion layer (2) formed on the semiconductor substrate (1), a second diffusion layer (3) formed at a part of the first diffusion layer (2), and an electrode film (7) formed on the first diffusion layer (2) through an insulation film (4) and transmitting the incident light and being applied with a gate voltage. The gate voltage is varied, and the depth (position) for capturing electrons generated in the first diffusion layer (2) by the incident light is varied accordingly to the gate voltage. Wavelength and intensity of the incident light are then measured by measuring a current indicative of the quantity of electrons.