发明名称 |
MFMOS/MFMS non-volatile memory transistors and method of making same |
摘要 |
A method of fabricating a non-volatile ferroelectric memory transistor includes forming a bottom electrode; depositing a ferroelectric layer over an active region beyond the margins of the bottom electrode; depositing a top electrode on the ferroelectric layer; and metallizing a structure obtained by the above-described steps to form a source electrode, a gate electrode and a drain electrode. A non-volatile ferroelectric memory transistor includes a bottom electrode formed above a gate region, wherein the bottom electrode has a predetermined area within a peripheral boundary; a ferroelectric layer extending over and beyond the bottom electrode peripheral boundary; and a top electrode formed on said ferroelectric layer. <IMAGE> |
申请公布号 |
EP1231631(A3) |
申请公布日期 |
2004.12.29 |
申请号 |
EP20020250984 |
申请日期 |
2002.02.13 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
HSU, SHENG TENG;ZHANG, FENGYAN;LI, TINGKAI |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L21/8246;H01L27/105;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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