SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

摘要

A semiconductor device provided with a MIS field effect transistor comprising a silicon substrate, a gate insulation film provided on this silicon substrate via a silicon-containing insulation film and having a high-permittivity metal oxide film, a silicon-containing gate electrode formed on this gate insulation film, and a side wall including, as a constitution member, silicon oxide on the side surface side of this gate electrode, wherein a silicon nitride film is interposed between this side wall and at least the side surface of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power-consumption and fast operation.