A semiconductor device has a trench (42) adjacent to a cell (18). The cell includes source and drain contact regions (26,28), and a central body (40) of opposite conductivity type. The device is bidirectional and controls current in either direction with a relatively low on-resistance. Preferred embodiments include potential plates (60) that act together with source and drain drift regions (30,32) to create a RESURF effect.
申请公布号
WO2004114410(A2)
申请公布日期
2004.12.29
申请号
WO2004IB01977
申请日期
2004.06.10
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;HUETING, RAYMOND, J., E.;HIJZEN, ERWIN, A.