METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE TO PREVENT RECESS OF POLYSILICON LAYER USING CRYSTALLIZED SILICIDE LAYER

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to prevent recess of a polysilicon layer by crystallizing a tungsten silicide layer using annealing. CONSTITUTION: A polysilicon layer(20P) and a metal silicide layer(22P) are sequentially formed on a semiconductor substrate(10). The metal silicide layer is crystallized by annealing in order to have the same etch rate with the polysilicon layer. A gate electrode pattern(G.P) is then formed by etching the crystallized silicide layer and the polysilicon layer using a single step.