发明名称 |
PROCESS AND APPARATUS FOR REACTIVE ION ETCHING |
摘要 |
Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state. |
申请公布号 |
DE2861385(D1) |
申请公布日期 |
1982.01.28 |
申请号 |
DE19782861385 |
申请日期 |
1978.12.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KELLER, JOHN HOWARD;MC KENNA, CHARLES MICHAEL |
分类号 |
H01J27/14;H01J37/08;H01J37/305;H01L21/302;(IPC1-7):H01J37/30;H01J37/05 |
主分类号 |
H01J27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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