METHOD FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL WAFER AND LASER PROCESSING DEVICE USED THEREFOR

摘要

A method for producing semiconductor single crystal wafer is characterized i n that a plurality of semiconductor single crystal wafers (2a-2d) having a relatively small diameter that is required by prospective consumers are cut out of a semiconductor single crystal wafer (1a-1d) having a relatively larg e diameter. This method has a secondary advantage in that even when a semiconductor singly crystal wafer of large-diameter partially has a defect, some semiconductor single crystal wafers of small-diameter can be cut out fo r shipment from the portion other than the region with the defect.