Three dimensional ferroelectric memory device.

摘要

The device has multiple trees (302) each corresponding to each bit line formed on a substrate, and having a trunk (305) and multiple branches (306). Each branch extending from trunk corresponds to one of multiple layers having memory cell arrays. Each of multiple plate-line groups having multiple plate-lines (307), overlap the branches of each tree at many intersection regions at which the memory cells (301) are located. Independent claims are also included for the following: (1) method for reading and erasing memory device; and (2) method for writing data to a previously erased memory device.