<p>A surface acoustic wave device which uses an interdigital electrode mainly containing Cu and is significantly improved in power resistance. The surface acoustic wave device (1) comprises a piezoelectric substrate (2), and an interdigital electrode (3) formed on the piezoelectric substrate (2), wherein the interdigital electrode (3) has a main electrode layer (3a) consisting of Cu or an alloy mainly containing Cu, and a close-contact layer (3b) disposed between the main electrode layer (3a) and the piezoelectric substrate (2) and mainly containing NiCr, or a close-contact layer (3b) mainly containting Ti and having a film thickness of 18-60 nm.</p>
