发明名称 Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure
摘要 An exposure method, an exposure apparatus, an X-ray mask and a resist for achieving enhanced resolution and throughput compared with those having been accomplished are provided and further a semiconductor device and a microstructure manufactured by using them are provided. According to the exposure method, X rays (2) emitted from an X-ray source (1) are radiated to a resist film (10) via an X-ray mask (8). A material constituting the resist film (10) is selected to have an average wavelength of X rays absorbed by the resist film (10) that is equal to or smaller than an average wavelength of X rays (2) radiated to the resist film (10). <IMAGE>
申请公布号 EP1193553(A3) 申请公布日期 2004.12.29
申请号 EP20010123043 申请日期 2001.09.26
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KITAYAMA, TOYOKI;ITOGA, KENJI;MARUMOTO, KENJI;FUJINO, ATSUKO;KUMADA, TERUHIKO
分类号 G21K1/06;G03F1/22;G03F7/004;G03F7/038;G03F7/039;G03F7/20;G21K3/00;H01L21/027;H05H13/04 主分类号 G21K1/06
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