发明名称 |
Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure |
摘要 |
An exposure method, an exposure apparatus, an X-ray mask and a resist for achieving enhanced resolution and throughput compared with those having been accomplished are provided and further a semiconductor device and a microstructure manufactured by using them are provided. According to the exposure method, X rays (2) emitted from an X-ray source (1) are radiated to a resist film (10) via an X-ray mask (8). A material constituting the resist film (10) is selected to have an average wavelength of X rays absorbed by the resist film (10) that is equal to or smaller than an average wavelength of X rays (2) radiated to the resist film (10). <IMAGE> |
申请公布号 |
EP1193553(A3) |
申请公布日期 |
2004.12.29 |
申请号 |
EP20010123043 |
申请日期 |
2001.09.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KITAYAMA, TOYOKI;ITOGA, KENJI;MARUMOTO, KENJI;FUJINO, ATSUKO;KUMADA, TERUHIKO |
分类号 |
G21K1/06;G03F1/22;G03F7/004;G03F7/038;G03F7/039;G03F7/20;G21K3/00;H01L21/027;H05H13/04 |
主分类号 |
G21K1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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