INTEGRATED CIRCUIT ARRANGEMENT WITH NPN AND PNP BIPOLAR TRANSISTORS AND CORRESPONDING PRODUCTION METHOD
摘要
An integrated circuit arrangement (100) is disclosed amongst other things, containing an NPN transistor (102) and a PNP transistor (104). Transistors with excellent electrical properties are produced when the PNP transistor comprises a recess (142), which defines the width of the emitter connection region (120) of the PNP transistor and the electrically conducting material of the connector region (120) laterally overlaps the recess (142).
申请公布号
WO2004114408(A1)
申请公布日期
2004.12.29
申请号
WO2004EP50978
申请日期
2004.06.01
申请人
INFINEON TECHNOLOGIES AG;BOETTNER, THOMAS;DREXL, STEFAN;HUTTNER, THOMAS;SECK, MARTIN
发明人
BOETTNER, THOMAS;DREXL, STEFAN;HUTTNER, THOMAS;SECK, MARTIN