发明名称 INTEGRATED CIRCUIT ARRANGEMENT WITH NPN AND PNP BIPOLAR TRANSISTORS AND CORRESPONDING PRODUCTION METHOD
摘要 An integrated circuit arrangement (100) is disclosed amongst other things, containing an NPN transistor (102) and a PNP transistor (104). Transistors with excellent electrical properties are produced when the PNP transistor comprises a recess (142), which defines the width of the emitter connection region (120) of the PNP transistor and the electrically conducting material of the connector region (120) laterally overlaps the recess (142).
申请公布号 WO2004114408(A1) 申请公布日期 2004.12.29
申请号 WO2004EP50978 申请日期 2004.06.01
申请人 INFINEON TECHNOLOGIES AG;BOETTNER, THOMAS;DREXL, STEFAN;HUTTNER, THOMAS;SECK, MARTIN 发明人 BOETTNER, THOMAS;DREXL, STEFAN;HUTTNER, THOMAS;SECK, MARTIN
分类号 H01L21/8228;H01L27/082 主分类号 H01L21/8228
代理机构 代理人
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