| 摘要 |
PURPOSE:To reduce the increase in the masking steps to once and to obtain a protecting diode having large protecting capacity by constructing a junction type diode of vertical structure on an insulating substrate. CONSTITUTION:The first amorphous silicon layer 2 including P type impurity is, for example, selectively covered on an insulating substrate 1. Subsequently, the second amorphous silicon layer 3 is selectively covered. After the third amorphous silicon layer 4 including an n type impurity is covered on the overall surface, nitrided silicon film 5 is selectively covered and formed. The layer 4 is converted by a plasma anodic oxidation into an oxidized silicon film 7, and the film 5 is then removed. A hole is opened at the film 7, metal wires 9, 10 are connected to the layers 2 and 4' as ohmic electrodes. In this manner, the increase in the masking steps is reduced to once, and yet the protecting capacity of the protecting diode can be increased. |
