| 发明名称 |
COMPOSITION FOR REMOVING SIDEWALL RESIDUES |
| 摘要 |
A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition. |
| 申请公布号 |
EP1490899(A1) |
申请公布日期 |
2004.12.29 |
| 申请号 |
EP20030760590 |
申请日期 |
2003.05.27 |
| 申请人 |
MERCK PATENT GMBH |
发明人 |
MELLIES, RAIMUND;BOERNER, MARC;ARNOLD, LUCIA;BARKO, ANDREA;RHEIN, RUDOLF |
| 分类号 |
H01L21/3065;C11D3/39;C11D7/08;C11D11/00;G03F7/42;H01L21/02;H01L21/304;H01L21/3213;H01L21/768;H01L25/00 |
主分类号 |
H01L21/3065 |
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