METHOD FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL WAFER AND LASER PROCESSING DEVICE USED THEREFOR
摘要
<p>A method for producing semiconductor single crystal wafer is characterized in that a plurality of semiconductor single crystal wafers (2a-2d) having a relatively small diameter that is required by prospective consumers are cut out of a semiconductor single crystal wafer (1a-1d) having a relatively large diameter. This method has a secondary advantage in that even when a semiconductor singly crystal wafer of large-diameter partially has a defect, some semiconductor single crystal wafers of small-diameter can be cut out for shipment from the portion other than the region with the defect.</p>
申请公布号
WO2004114387(A1)
申请公布日期
2004.12.29
申请号
WO2004JP08108
申请日期
2004.06.10
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.;OTSUKI, MAKOTO;NISHIKAWA, MASAYUKI;MATSUI, YASUYUKI