| 发明名称 |
Multiple work function gates |
| 摘要 |
A method of forming a first and second transistors with differing work function gates by differing metals deposited to react with a silicon or silicon-germanium gate layer.
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| 申请公布号 |
US6835639(B2) |
申请公布日期 |
2004.12.28 |
| 申请号 |
US20020302212 |
申请日期 |
2002.11.22 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO ANTONIO L. P.;VISOKAY MARK R. |
| 分类号 |
H01L21/8238;(IPC1-7):H01L21/320;H01L21/476;H01L21/44 |
主分类号 |
H01L21/8238 |
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