发明名称 |
Plasma process for removing polymer and residues from substrates |
摘要 |
A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.
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申请公布号 |
US6834656(B2) |
申请公布日期 |
2004.12.28 |
申请号 |
US20010864003 |
申请日期 |
2001.05.23 |
申请人 |
AXCELIS TECHNOLOGY, INC. |
发明人 |
QINGYUAN HAN;WALDFRIED CARLO;ESCORCIA ORLANDO;DAHROOGE GARY;BERRY IVAN |
分类号 |
B08B7/00;C03C15/00;C03C23/00;C23G5/00;G03F7/42;H01L21/311;(IPC1-7):B08B7/04 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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