发明名称 |
Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same |
摘要 |
A first axis MEM tunneling/capacitive sensor and method of making same. Cantilever beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arrange sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer.
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申请公布号 |
US6835587(B2) |
申请公布日期 |
2004.12.28 |
申请号 |
US20030639289 |
申请日期 |
2003.08.11 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
KUBENA RANDALL L.;CHANG DAVID T. |
分类号 |
G01P9/04;B81B3/00;B81C1/00;B81C3/00;G01C19/56;G01P15/08;G01P15/18;H01H1/00;H01H59/00;H01L41/08;(IPC1-7):H01L21/00 |
主分类号 |
G01P9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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