发明名称 ESD resistant device
摘要 A semiconductor device such as a photodetector has a substrate having an active region layer containing an active region of the device. A dielectric layer is disposed on the active region layer, and a metal active region contact is disposed in the dielectric layer above the active region and electrically contacting the active region. A metal electrostatic discharge (ESD)protection structure is disposed in the dielectric layer around the active region contact, wherein the ESD protection structure electrically contacts the active region layer of the substrate to provide an ESD discharge path for charge on the surface of the dielectric layer.
申请公布号 US6835984(B2) 申请公布日期 2004.12.28
申请号 US20020215442 申请日期 2002.08.09
申请人 AGERE SYSTEMS INC. 发明人 DERKITS, JR. GUSTAV EDWARD;MARCHUT LESLIE;NASH FRANKLIN R.
分类号 H01L27/04;H01L21/822;H01L31/0216;H01L31/10;H01L31/105;H01L31/107;(IPC1-7):H01L23/62 主分类号 H01L27/04
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