| 摘要 |
An apparatus for growing thin films by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises a reaction chamber including a reaction space, infeed means connected to the reaction space for feeding into the reaction space the reactants, and outfeed means connected to the reaction space for discharging waste gases. At least one substrate is adapted into the reaction space and a second surface is also adapted into the reaction space in a disposition opposed to the surface of the substrate. The thin-film growth supporting surface of the substrate and the other surface disposed opposing the same are arranged in the reaction chamber so as to subtend an angle opening in the flow direction of the reactants in relation to the opposed surfaces. The distance between the opposed surfaces at the infeed end of reactants is smaller than at the gas outfeed end.
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