发明名称 Single level metal memory cell using chalcogenide cladding
摘要 An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
申请公布号 US6836423(B2) 申请公布日期 2004.12.28
申请号 US20020281337 申请日期 2002.10.25
申请人 OVONYX, INC. 发明人 LOWREY TYLER A.;GILL MANZUR
分类号 G11C17/06;H01L27/24;(IPC1-7):G11C17/00 主分类号 G11C17/06
代理机构 代理人
主权项
地址