| 发明名称 |
Mask for projection photolithography at or below about 160 nm and a method thereof |
| 摘要 |
An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm.
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| 申请公布号 |
US6835505(B2) |
申请公布日期 |
2004.12.28 |
| 申请号 |
US20020156226 |
申请日期 |
2002.05.24 |
| 申请人 |
ROCHESTER INSTITUTE OF TECHNOLOGY |
发明人 |
SMITH BRUCE W. |
| 分类号 |
G03F1/00;G03F1/08;G03F1/14;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
| 代理机构 |
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