发明名称 |
Electrode forming method and field effect transistor |
摘要 |
A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing.
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申请公布号 |
US6835635(B2) |
申请公布日期 |
2004.12.28 |
申请号 |
US20020316210 |
申请日期 |
2002.12.10 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
SETO HIROYUKI;INAI MAKOTO;NAKANO HIROYUKI;TAI EIJI |
分类号 |
H01L29/417;H01L21/027;H01L21/285;H01L21/338;H01L29/423;H01L29/812;(IPC1-7):H01L21/28;H01L21/44 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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