| 摘要 |
FIELD: interaction materials technology. ^ SUBSTANCE: dissolution of copper, in particular when processing secondary wastes, e.g. electronic scrap, copper-plated metallic zirconium and haffnium wastes, copper-enrobed semiconductor material wastes, is carried out with nitric acid having concentration no higher than 270 g/L while simultaneously neutralizing nitrogen oxides directly in solution as being formed using for that aim ammonium nitrate preliminarily dissolved in the same medium in amounts 100 to 300% based on stoichiometrically needed quantity. Dissolution rate is controlled by portionwise and gradually adding leaching solution. ^ EFFECT: optimized dissolution conditions. ^ 3 cl, 11 ex |
