ALD METHOD OF Al2O3 LAYER USING DMAH:EPP AS SOURCE GAS

摘要

PURPOSE: An ALD(Atomic Layer Deposition) method of an Al2O3 layer is provided to improve depositing-speed and to reduce remarkably the consumption of a source gas by using DMAH:EPP(Di-Methyl Aluminium Hydride : Ethyl PiPeridine) instead of conventional TMA(Tri-Methyl Aluminium) as the source gas. CONSTITUTION: A DMAH:EPP layer is deposited on a substrate by spraying DMAH:EPP used as an aluminium source into a process chamber. An Al2O3 layer is formed on the substrate by spraying oxygen into the process chamber. The process chamber has a temperature range of 200 to 350 °C and a pressure range of 10¬-6 to 10¬-2 Torr. The oxygen is one selected from a group consisting of O3, H2O, H2O2 and N2O.