| 摘要 |
A composite transistor (TC) is provided, comprising an extended drain MOS transistor (T1) and a symmetrical MOS transistor (T2) sharing a common source/drain (114b). A method is presented for fabricating an integrated circuit, comprising forming an extended drain (114a, 120) of a first conductivity type in a semiconductor body (104), forming a source (114c) of the first conductivity type in the semiconductor body (104), forming a first channel (128a) of a second conductivity type along at least a portion of a side of the extended drain (114a, 120) in the semiconductor body (104), forming a second channel (128b) of the second conductivity type along at least a portion of a side of the source (114c), and forming a shared source/drain (114b) of the first conductivity type extending between the first and second channels (128a, 128b).
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