Test method for testing high-speed semiconductor memory, especially DDR-DRAM in conjunction with a memory control unit, whereby the test signal is provided by the memory control unit or a unit derived from it

摘要

Test method for testing high speed semiconductor memory (1), especially DDR-DRAM modules using a test device (4) and a memory control unit. A test signal bus (51') is used to link a test signal unit (41') with the test device. The test signal unit is provided by a memory control unit or a simplified memory control unit derived from a memory control unit and is integrated in the test socket (2'). Independent claims are also included for the following:- (a) a test arrangement for testing semiconductor memory circuits and; (b) a test socket for testing semiconductor memory in conjunction with a memory control unit.