METHOD FOR PROCESSING NITRIDE SEMICONDUCTOR CRYSTAL SURFACE AND NITRIDE SEMICONDUCTOR CRYSTAL OBTAINED BY SUCH METHOD

摘要

A method for processing a nitride semiconductor crystal surface is characterized in that a process liquid (15) containing at least Na, Li or Ca is brought into contact with the surface of a nitride semiconductor crystal (11). The process liquid (15) may be a liquid containing at least Na whose Na content is 5-95 mol%. The process liquid (15) may be a liquid containing at least Li whose Li content is 5-100 mol%. A nitride semiconductor crystal obtained by such a method is also disclosed which has a maximum surface scratch depth of 0.01 mum or less and an average degenerated layer thickness of 2 mum or less. Namely, the method for processing a nitride semiconductor crystal surface enables to reduce surface scratch depth and degenerated layer thickness, and the nitride semiconductor crystal obtained by such a method has a shallow surface scratch depth and a thin degenerated layer thickness.