SEMICONDUCTOR DEVICE

摘要

A semiconductor device (10) comprises an intermediate layer (13) arranged between a semiconductor element (11) and a heatsink (12). The intermediate layer (13) reduces thermal stress which is caused by the heat generated in the semiconductor element (11) due to the thermal expansion gap between the semiconductor element (11) and the heatsink (12). By reducing the thermal stress, warping of the semiconductor device (10) as a whole can be reduced. The intermediate layer (13) is, for example, composed of a carbon-copper composite material.