| 摘要 |
<p>The aluminum nitride conjugate body of the invention is characterized by comprising two aluminum nitride sintered body plates conjugate without using any adhesive agent, and a metal layer formed in a portion of the conjugate interface thereof, wherein as seen in a lateral sectional view taken through the center of the conjugate body, a direct conjugate region where the sintered body plates themselves in the conjugate interface are directly opposed to each other has a plurality of holes whose length along the conjugate interface is 0.5 - 4 mum on average, the holes forming a non-conjugate section. In the lateral sectional view, the non-conjugate percentage (Q) calculated by the following formula (1) is in the range of 0.1 - 0.5% on average; non-conjugate percentage (Q) = (X/Y) x 100 (1) where X is the length of the non-conjugate section in the direction of the conjugate interface, expressed in terms of the total value of respective lengths of the holes existing in the direct conjugate region, and Y is the length of the direct conjugate region where the holes exist. Such AlN conjugate body has its warping in the inner metal layer effectively suppressed, has high conjugate strength, is superior in durability, and in a semiconductor producing device, it is useful as a plate heater or an electrostatic chuck for processing a semiconductor wafer placed thereon.</p> |
