| 摘要 |
In a method for adjusting a threshold voltage of a memory cell, energy is applied into a film comprised of a material capable of changing threshold voltage. By way of example, the film may be comprised of a chalcogenide material. The energy may be applied in the form of an electrical pulse (voltage pulse or current pulse), a pulse of light (a laser pulse), a pulse of heat, or microwave energy. The energy pulses may have a predetermined magnitude, may have a predetermined profile, and may be applied for a predetermined duration to change the threshold voltage. A method for adjusting a threshold voltage of a chalcogenide material also is described. In this method, energy is applied into a chalcogenide material.
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