| 发明名称 |
Semiconductor device, semiconductor circuit module and manufacturing method of the same |
| 摘要 |
An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.
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| 申请公布号 |
US2004256613(A1) |
申请公布日期 |
2004.12.23 |
| 申请号 |
US20040790190 |
申请日期 |
2004.03.02 |
| 申请人 |
ODA KATSUYA;SUGII NOBUYUKI;MIURA MAKOTO;SUZUMURA ISAO;WASHIO KATSUYOSHI |
发明人 |
ODA KATSUYA;SUGII NOBUYUKI;MIURA MAKOTO;SUZUMURA ISAO;WASHIO KATSUYOSHI |
| 分类号 |
H01L21/331;H01L21/04;H01L21/338;H01L21/8238;H01L27/092;H01L29/10;H01L29/161;H01L29/24;H01L29/737;H01L29/778;H01L29/812;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/331 |
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