发明名称 Polishing method polishing system and method for fabricating semiconductor device
摘要 There are provided a polishing method and a polishing apparatus for appropriately controlling the potential of an acting electrode to perform an accurate and stable electrolytic polishing process. There is also provided a method of manufacturing a semiconductor device using the polishing method and the polishing apparatus. In the polishing method according to the present invention, a substrate with a metal film formed thereon and a counter electrode are disposed in facing relation to each other in an electrolytic liquid, and a current is supplied to the metal film through the electrolytic liquid based on the potential of the metal film with respect to a reference electrode. The polishing apparatus according to the present invention has, disposed in an electrolytic liquid, a substrate with a metal film formed thereon, a counter electrode disposed in facing relation to the substrate with a predetermined gap therebetween, and a reference electrode for providing a reference potential for the metal film, wherein a current is supplied to the metal film through the electrolytic liquid based on the potential of the metal film with respect to the reference electrode.
申请公布号 US2004259365(A1) 申请公布日期 2004.12.23
申请号 US20040484013 申请日期 2004.07.23
申请人 KOMAI NAOKI;NOGAMI TAKESHI;TAKAHASHI SHINGO;HORIKOSHI HIROSHI;TAI KAORI;SATO SHUZO;OHTORII HIIZU 发明人 KOMAI NAOKI;NOGAMI TAKESHI;TAKAHASHI SHINGO;HORIKOSHI HIROSHI;TAI KAORI;SATO SHUZO;OHTORII HIIZU
分类号 B23H5/08;C25D3/02;C25F3/16;C25F3/30;C25F7/00;H01L21/304;H01L21/321;(IPC1-7):H01L21/302;H01L21/461 主分类号 B23H5/08
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