发明名称 |
METHOD OF PATTERNING A MAGNETIC MEMORY CELL BOTTOM ELECTRODE BEFORE MAGNETIC STACK DEPOSITION |
摘要 |
A method of patterning a bottom electrode for a magnetic memory cell. The bottom electrode is patterned prior to the deposition of the soft layer of the magnetic tunnel junction (MTJ) material stack, preventing the formation of fencing on the sidewalls of the soft layer, which can cause shorts to subsequently formed conductive lines of the magnetic memory device. A sacrificial mask is used to pattern the bottom electrode material, and at least a portion of the sacrificial mask is consumed or removed during the patterning of the bottom electrode material. The soft layer is then deposited and patterned using a hard mask.
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申请公布号 |
US2004259274(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20030600920 |
申请日期 |
2003.06.20 |
申请人 |
PARK CHANRO;LEE GILL YONG |
发明人 |
PARK CHANRO;LEE GILL YONG |
分类号 |
H01F10/00;H01L21/00;H01L21/3213;H01L27/22;H01L43/12;(IPC1-7):H01L21/00 |
主分类号 |
H01F10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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